型号:

SSM6N37FE,LM

RoHS:无铅 / 符合
制造商:Toshiba描述:MOSFET N CH 20V 250MA 2-2N1D
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
SSM6N37FE,LM PDF
标准包装 4,000
系列 -
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 250mA
开态Rds(最大)@ Id, Vgs @ 25° C 2.2 欧姆 @ 100mA,4.5V
Id 时的 Vgs(th)(最大) 1V @ 1mA
闸电荷(Qg) @ Vgs -
输入电容 (Ciss) @ Vds 12pF @ 10V
功率 - 最大 150mW
安装类型 表面贴装
封装/外壳 SOT-563,SOT-666
供应商设备封装 ES6
包装 带卷 (TR)
其它名称 SSM6N37FELMTR
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